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  in1, in2 no4 com2 no2 nc3 in3, in4 nc1 com4 1 2 3 12 11 10 4 9 5678 16 15 14 13 nc2 gnd no3 com3 com1 no1 v+ nc4 top view dg2718 qfn-16 (3 x 3) note: underside exposed pad has no device electrical connection. it is recommended that no electrical connection is made to it. dg2718 vishay siliconix new product document number: 72677 s-32597?rev. a, 29-dec-03 www.vishay.com 1 0.45-  cmos, 1.65-v to 3.6-v, dual dpdt analog switch features  low voltage operation (1.65 v to 3.6 v)  low on-resistance - r on: 0.45  @ 2.7 v  fast switching: t on = 28 ns t off = 17 ns  qfn-16 (3x3) package benefits  reduced power consumption  high accuracy  reduce board space  ttl/1.8-v logic compatible  high bandwidth applications  cellular phones  speaker headset switching  audio and video signal routing  pcmcia cards  battery operated systems description the dg2718 is a dual double-pole/double-throw monolithic cmos analog switch designed for high performance switching of analog signals. combining low power, high speed, low on-resistance and small physical size, the dg2718 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. the dg2718 is built on vishay s iliconix?s low voltage process. an epitaxial layer prevents latchup. break-before-make is guaranteed. the switch conducts equally well in both directions when on, and blocks up to the power supply level when off. functional block diagram and pin configuration truth table logic nc1, 2, 3 and 4 no1, 2, 3 and 4 0 on off 1 off on ordering informa tion* temp range package part number -40 to 85 c 16-pin qfn (3 x 3 mm) variation 2 DG2718DN * lead-free v ersion available
dg2718 vishay siliconix new product www.vishay.com 2 document number: 72677 s-32597?rev. a, 29-dec-03 absolute maximum ratings reference to gnd v+ -0.3 to +4.0 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . in, com, nc, no a -0.3 to (v+ + 0.3 v) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . current (any terminal except no, nc or com) 30 ma . . . . . . . . . . . . . . . . . . continuous current (no, nc, or com)  300 ma . . . . . . . . . . . . . . . . . . . . . peak current  500 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (pulsed at 1 ms, 10% duty cycle) storage temperature (d suffix) -65 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . package solder reflow conditions d 16-pin qfn (3 x 3 mm) 250 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . power dissipation (packages) b qfn-16 c 1385 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . notes: a. signals on nc, no, or com or in exceeding v+ will be clamped by inter- nal diodes. limit forward diode current to maximum current ratings. b. all leads welded or soldered to pc board. c. derate 17.3 mw/  c above 70  c d. manual soldering with iron is not recommended for leadless components. the qfn is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufactur- ing. a solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratin gs only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (v+ = 1.8 v) test conditions otherwise unless specified limits ? 40 to 85  c parameter symbol v+ = 1.8 v, v in = 0.4 or 1.1 v e temp a min b typ c max b unit analog switch analog signal range d v no , v nc , v com full 0 v+ v on-resistance d r on v+ = 1.8 v, v com = 0.2 v/0.9 v, i no , i nc = 100 ma room full 0.7 2.0 2.8  digital control input high v oltage v inh full 1.1 v input low voltage v inl full 0.4 v input capacitance c in full 6 pf input current i inl or i inh v in = 0 or v+ full ? 1 1  a dynamic characteristics turn-on time t on room full 62 94 92 turn-off time t off v no or v nc = 1.5 v, r l = 50  , c l = 35 pf room full 24 52 55 ns break-before-make time t d full 16 charge injection d q inj c l = 1 nf, v gen = 0 v, r gen = 0  room 65 pc off-isolation d oirr r l = 50  c l = 5 pf f = 100 khz room ? 74 db crosstalk d x talk r l = 50  , c l = 5 pf, f = 100 khz room ? 74 db n o n c off capacitance d c no(off) room 108 n o , n c off capacitance d c nc(off) v in = 0 or v+ f = 1 mhz room 108 pf channel on capacitance d c no(on) v in = 0 or v+, f = 1 mhz room 225 pf channel-on capacitance d c nc(on) room 225 power supply power supply current i+ v in = 0 or v+ full 1.0  a
dg2718 vishay siliconix new product document number: 72677 s-32597?rev. a, 29-dec-03 www.vishay.com 3 specifications (v+ = 3 v) test conditions otherwise unless specified limits ? 40 to 85  c parameter symbol v+ = 3 v,  10%, v in = 0.5 or 1.4 v e temp a min b typ c max b unit analog switch analog signal range d v no , v nc , v com full 0 v+ v on-resistance d r on v+ = 2.7 v, v com = 0.2 v/1.5 v, i no , i nc = 100 ma room full 0.45 0.6 0.7 r on flatness d r on flatness v+ = 2.7 v v com = 0 to v+ i no i nc = 100 ma room 0.1 0.15  r on match d  r on v com = 0 to v+, i no , i nc = 100 ma room 0.05 switch off leakage current i no(off) , i nc(off) v+ = 3.3 v, v no , v nc = 0.3 v/3 v room full ? 1 ? 10 1 10 switch off leakage current i com(off) v+ = 3 . 3 v , v no , v nc = 0 . 3 v/3 v v com = 3 v/0.3 v room full ? 1 ? 10 1 10 na channel-on leakage current i com(on) v+ = 3.3 v, v no , v nc = v com = 0.3 v/3 v room full ? 1 ? 10 1 10 digital control input high v oltage v inh full 1.4 v input low voltage v inl full 0.5 v input capacitance c in full 6 pf input current i inl or i inh v in = 0 or v+ full ? 1 1  a dynamic characteristics turn-on time t on room full 28 57 60 turn-off time t off v no or v nc = 1.5 v, r l = 50  , c l = 35 pf room full 17 45 47 ns break-before-make time t d full 1 charge injection d q inj c l = 1 nf, v gen = 0 v, r gen = 0  room 232 pc off-isolation d oirr r l = 50  c l = 5 pf f = 100 khz room ? 75 db crosstalk d x talk r l = 50  , c l = 5 pf, f = 100 khz room ? 75 db n o n c off capacitance d c no(off) room 102 n o , n c off capacitance d c nc(off) v in = 0 or v+ f = 1 mhz room 102 pf channel on capacitance d c no(on) v in = 0 or v+, f = 1 mhz room 234 pf channel-on capacitance d c nc(on) room 234 power supply power supply range v+ 2.7 3.3 v power supply current i+ v in = 0 or v+ full 1.0  a notes: a. room = 25 c, full = as determined by the operating suffix. b. typical values are for design aid only, not guaranteed nor subject to production testing. c. the algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data s heet. d. guarantee by design, nor subjected to production test. e. v in = input voltage to perform proper function. f. guaranteed by 5-v leakage testing, not production tested.
dg2718 vishay siliconix new product www.vishay.com 4 document number: 72677 s-32597?rev. a, 29-dec-03 typical characteristics (25  c unless noted) 10 10 k 100 k 10 m 100 1 k 1 m 100 ma 1 ma 100  a 10  a 1  a 10 na 100 pa ? 60 ? 40 ? 200 20406080100 supply current vs. input switching frequency input switching frequency (hz) i+ ? supply current (a) 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 r on vs. v com and supply v oltage v com ? analog v oltage (v) v+ = 1.65 v ? on-resistance ( r on  ) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 r on vs. analog voltage and t emperature v com ? analog v oltage (v) 25  c ? on-resistance ( r on  ) 1 10000 supply current vs. temperature temperature (  c) 10 1000 i+ ? supply current (na) v+ = 2.7 v t = 25  c i s = 100 ma ? 40  c 85  c v+ = 3 v v in = 0 v i s = 100 ma v+ = 3 v 100 na 1 na v+ = 1.8 v v+ = 2.0 v v+ = 2.3 v v+ = 2.7 v v+ = 3.0 v v+ = 3.3 v v+ = 3.6 v 100 10 ma ? 300 ? 250 ? 200 ? 150 ? 100 ? 50 0 50 100 150 200 250 300 0.00 0.50 1.00 1.50 2.00 2.50 3.00 leakage vs. analog v oltage v com , v no , v nc ? analog v oltage (v) 1 1000 leakage current vs. temperature temperature (  c) v+ = 3.3 v 10 100 leakage current (pa) v+ = 3.3 v i no(off) , ii nc(off) i com(off) i com(on) i no(off) , i nc(off) i com(on) i com(off) leakage current (pa) ? 60 ? 40 ? 200 20406080100
dg2718 vishay siliconix new product document number: 72677 s-32597?rev. a, 29-dec-03 www.vishay.com 5 typical characteristics (25  c unless noted) 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 1.0 1.5 2.0 2.5 3.0 3.5 4.0 ? 100 ? 50 0 50 100 150 200 250 0.0 0.5 1.0 1.5 2.0 2.5 3.0 charge injection vs. analog voltage v com ? analog v oltage (v) q ? charge injection (pc) switching threshold vs. supply v oltage v+ ? supply voltage (v) ? switching threshold (v) v t 100 k ? 90 10 m 10 ? 70 ? 50 100 m 1 g 1 m insertion loss, off-isolation crosstalk vs. frequency frequency (hz) 0 10 20 30 40 50 60 70 ? 60 ? 40 ? 20 0 20 40 60 80 100 switching time vs. t emperature / t on ? switching time ( t off s)  (db) loss, oirr, x talk ? 30 ? 10 v+ = 3 v loss oirr x talk v+ = 3 v r l = 50  temperature (  c) t on v+ = 1.8 v t on v+ = 2.3 v t on v+ = 3.0 v t off v+ = 3.0 v t off v+ = 2.3 v t off v+ = 1.8 v v+ = 1.8 v test circuits figure 1. switching time switch input c l (includes fixture and stray capacitance) v+ in no or nc c l 35 pf com logic input r l 300  v out gnd v+ 50% 0 v logic input switch output t on t off logic ?1? = switch on logic input waveforms inverted for switches that have the opposite logic sense. 0 v switch output v out  v com  r l r l  r on  0.9 x v out t r  5 ns t f  5 ns v inh v inl
dg2718 vishay siliconix new product www.vishay.com 6 document number: 72677 s-32597?rev. a, 29-dec-03 test circuits figure 3. charge injection off on on in  v out v out q =  v out x c l c l = 1 nf r gen v out com v in = 0 ? v+ in v gen gnd v+ v+ in depends on switch configuration: input polarity determined by sense of switch. + nc or no figure 2. break-before-make interval c l (includes fixture and stray capacitance) nc v no no v nc 0 v logic input switch output v o v nc = v no t r <5 ns t f <5 ns 90% t d t d in com v+ gnd v+ c l 35 pf v o r l 300  v inl v inh figure 4. off-isolation figure 5. channel off/on capacitance nc or no f = 1 mhz in com gnd 0 v, 2.4 v meter hp4192a impedance analyzer or equivalent 10 nf v+ v+ in gnd nc or no 0v, 2.4 v 10 nf com off isolation  20 log v com v no  nc r l analyzer v+ v+ com


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